Micron Technology DRAM SDRAM-DDR3L, Part #: MT41K256M8DA-125 AAT:K | Dynamic random access memory | DEX MRC1 Without bose or bang &

Without bose or bang & olufsen audio

The BCM56275 device’s integrated MACsec helps secure these endpoints and prevent intrusion

VES: 29086819

Small Signal

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Micron Technology DRAM SDRAM-DDR3L, Part #: MT41K256M8DA-125 AAT:K | Dynamic random access memory | DEX MRC1 Without bose or bang &Micron Technology DRAM SDRAM DDR3, Part #: MT41K256M8DA 125 AAT: K features: VDD = VDDQ = 1. 35V (1. 2831. 45V) Backward compatible to VDD = VDDQ = 1. 5V 0. 075V Differential bidirectional data strobe 8n bit prefetch architecture Differential clock inputs (CK, CK#) 8 internal banks Nominal and dynamic on die termination (ODT) for data, strobe, and mask signals Programmable CAS (READ) latency (CL) Programmable posted CAS additive latency (AL)